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A Highly Reliable 256-kb MNOS EEPROM : Memory Cell Design Technology.
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- المؤلفون: Kamigaki, Yoshiaki1; Minami, Shin-ichi1; Furusawa, Kazunori2; Furuno, Takeshi2; Uchida, Ken2; Hagiwara, Takaaki2; Sato, Nobuyuki3; Ujiie, Kazufusa3
- المصدر:
Electronics & Communications in Japan, Part 2: Electronics. Sep90, Vol. 73 Issue 9, p79-90. 12p.
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