POLYCRYSTALLINE SILICON THIN FILM OBTAINED BY ALUMINUM INDUCED CRYSTALLIZATION.

This study is on a new approach for fabrication of poly-Si thin films. Aluminum-induced crystallization of a-Si film has been achieved by thermal annealing only at around 400 °C. The Experimental results reveal that the Al on top of a-Si arrangement has more evident effect in crystallization enhancement than that with Al under a-Si, and the resultant poly-Si films show preferred (400) crystal orientation. It is verified that aluminum can cause lateral crystallization of a-Si film. No preferred orientation was noticed from lateral crystallization samples. [ABSTRACT FROM AUTHOR]

Copyright of International Journal of Computational Engineering Science is the property of World Scientific Publishing Company and its content may not be copied or emailed to multiple sites or posted to a listserv without the copyright holder's express written permission. However, users may print, download, or email articles for individual use. This abstract may be abridged. No warranty is given about the accuracy of the copy. Users should refer to the original published version of the material for the full abstract. (Copyright applies to all Abstracts.)