MOCVD-GROWN InGaP/GaAs EMITTER DELTA DOPING HETEROJUNCTION BIPOLAR TRANSISTORS.

The influence of delta doping sheet at base-emitter (BE) junction for an InGaP/GaAs heterojunction bipolar transistor (HBT) with a 75 Å undoped spacer layer is investigated. A common emitter current gain of 235, an offset voltage as small as 50 mV and an Ic ideal factor of 1.01 are obtained, respectively. The use of delta doping sheet at BE junction results in a high gain and low offset voltage HBT. The improvement of current gain and offset voltage may be attributed to the reduction of BE potential spike by introducing a delta doping layer even without the BE junction passivation. [ABSTRACT FROM AUTHOR]

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