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Conference

Junction-engineered Scaled High-performance GAA Nanosheet FETs with Ultra-low Temperature (< 350 °C) SiGe:B Source/Drain

  • Source: ISBN:979-8-3315-6785-9 ; ISSN:2156-017X ; 2025 International Electron Devices Meeting (IEDM), (1-4) ; International Electron Devices Meeting (IEDM), San Francisco, California, 6-11 December

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