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Atomistic insights into the full-cycle switching of Y-doped Sb2Te3 phase change memory

• Authors : Kaiqi Li; Xuanguang Zhang; Hongming Chen

Subjects: Machine learning interatomic potentials; Molecular dynamics; Phasechange materials

• Source: Materials & Design, Vol 265, Iss , Pp 115941- (2026)

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Impact of antimony blending on various thermal stability parameters and crystallization dynamics in amorphous Se80In5Te15-xSbx quaternary chalcogenide glasses.

• Authors : Khan, Imtiyaz H.¹ (AUTHOR); Srivastava, Aditya¹ (AUTHOR); Tripathi, Ravi P.² (AUTHOR)

• Source: Phase Transitions. Apr/May2025, Vol. 98 Issue 4/5, p290-306. 17p.

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Breaking the Speed Limits of Phase-Change Memory

• Authors : Loke, D.; Lee, T. H.; Wang, W. J.

• Source: Science, 2012 Jun . 336(6088), 1566-1569.

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Understanding phase and chemical transitions in Ge-rich GeSbTe based phase change memory: A (S)TEM tribute

• Authors : Ran Sijia; Luong Minh-Anh; Rahier Eloïse

Subjects: phase-change-memory; chalcogenide; in-situ tem

• Source: BIO Web of Conferences, Vol 129, p 24011 (2024)

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Phase-change memory cells based on nanoparticles alloy Ag-Au

• Authors : D.A. Ryzhkova

Subjects: nanoclusters; silver; gold

• Source: Физико-химические аспекты изучения кластеров, наноструктур и наноматериалов, Iss 15, Pp 536-542 (2023)

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Effect of doping on the crystallization kinetics of phase change memory materials on the basis of Ge-Sb-Te system.

• Authors : Babich, Alexey¹ ; Sherchenkov, Alexey¹; Kozyukhin, Sergey

• Source: Journal of Thermal Analysis & Calorimetry. Jan2017, Vol. 127 Issue 1, p283-290. 8p.

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Improved phase change behavior of SbTe material by ZnSb doping for phase change memory.

• Authors : Shen, Xiang ; Chen, Yimin¹; Wang, Zhanshan²

• Source: Applied Physics A: Materials Science & Processing. May2015, Vol. 119 Issue 2, p425-429. 5p. 4 Graphs.

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Simultaneously low resistance drift and ultra‐fast phase change speed based on GeSb/Sb multilayer thin films.

• Authors : Wang, Cheng¹ (AUTHOR); Hu, Yifeng^1,2 (AUTHOR) ; Zhang, Jianhao¹ (AUTHOR)

• Source: Journal of the American Ceramic Society. Jan2024, Vol. 107 Issue 1, p534-542. 9p.

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Influence of the Degree of Crystallinity on the Dispersion of the Optical Parameters of Ge2Sb2Te5 Phase-Change Memory Thin Films.

• Authors : Fedyanina, M. E.¹ (AUTHOR) ; Lazarenko, P. I.¹ (AUTHOR); Vorobyov, Yu. V.² (AUTHOR)

• Source: Semiconductors. 2020, Vol. 54 Issue 13, p1775-1783. 9p.

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Advantages of Ta-Doped Sb3Te1 Materials for Phase Change Memory Applications

• Authors : Mingyue Shao; Yang Qiao; Yuan Xue

Subjects: high speed; thermal stability; crystallization

• Source: Nanomaterials, Vol 13, Iss 4, p 633 (2023)

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