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Effect of coupled electronic and nuclear energy deposition on strain and stress levels in UO$_2$

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  • معلومة اضافية
    • Contributors:
      CEA-Direction des Energies (ex-Direction de l'Energie Nucléaire) (CEA-DES (ex-DEN)); Commissariat à l'énergie atomique et aux énergies alternatives (CEA); Centre de Sciences Nucléaires et de Sciences de la Matière (CSNSM); Université Paris-Sud - Paris 11 (UP11)-Institut National de Physique Nucléaire et de Physique des Particules du CNRS (IN2P3)-Centre National de la Recherche Scientifique (CNRS)
    • بيانات النشر:
      CCSD
    • الموضوع:
      2019
    • Collection:
      HAL-CEA (Commissariat à l'énergie atomique et aux énergies alternatives)
    • نبذة مختصرة :
      International audience ; UO2 polycrystals were irradiated in the nuclear energy-loss regime, Sn (900 keV I and 2 Mev Au ions) and also with an additional electronic energy deposition, Se (900 keV I and 36 MeV W ions simultaneously, i.e. Sn&Se). The strain/stress state exhibited by the irradiated pellets was determined by x-ray diffraction measurements. Results show that both measured strain and estimated stress are lower in the dual-beam irradiated samples, indicating that there is an ionization-induced change in the ballistically-generated-defect spectrum. Furthermore, it is shown that the thin irradiated layers maintain the lattice parameter of the pristine material in the basal plane.
    • Relation:
      INSPIRE: 1735592
    • الرقم المعرف:
      10.1016/j.jnucmat.2019.03.034
    • الدخول الالكتروني :
      https://hal.science/hal-02136517
      https://hal.science/hal-02136517v1/document
      https://hal.science/hal-02136517v1/file/S0022311519300558.pdf
      https://doi.org/10.1016/j.jnucmat.2019.03.034
    • Rights:
      http://creativecommons.org/licenses/by-nc/ ; info:eu-repo/semantics/OpenAccess
    • الرقم المعرف:
      edsbas.F3812AC2