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Academic Journal

TCAD-Based Analysis on the Impact of AlN Interlayer in Normally-off AlGaN/GaN MISHEMTs with Buried p-Region

Subjects: HEMT; TCAD simulation; Silvaco

  • Source: ISSN: 2079-9292 ; Electronics ; https://laas.hal.science/hal-04887718 ; Electronics, 2025, 14 (2), pp.313. ⟨10.3390/electronics14020313⟩.

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Academic Journal

The High Energy X-ray Probe (HEX-P): Studying Extreme Accretion with Ultraluminous X-ray Sources

Subjects: ultraluminous X-ray sources; HEX-P; pulsars

  • Source: ISSN: 2296-987X ; Frontiers in Astronomy and Space Sciences ; https://hal.science/hal-04279325 ; Frontiers in Astronomy and Space Sciences, 2023, 10, pp.1289432.

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Academic Journal

The high energy X-ray probe (HEX-P): science overview

Subjects: [PHYS.ASTR]Physics [physics]/Astrophysics [astro-ph]

  • Source: ISSN: 2296-987X ; Frontiers in Astronomy and Space Sciences ; https://hal.science/hal-04940896 ; Frontiers in Astronomy and Space Sciences, 2024, 11, ⟨10.3389/fspas.2024.1471585⟩.

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Academic Journal

The High Energy X-ray Probe (HEX-P): Constraining Supermassive Black Hole Growth with Population Spin Measurements

Subjects: Supermassive black holes; AGN; black hole growth

  • Source: Front.Astron.Space Sci. ; https://hal.science/hal-04324193 ; Front.Astron.Space Sci., 2024, 11, pp.1324796. ⟨10.3389/fspas.2024.1324796⟩

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Academic Journal

Preconditioning of Ohmic p-GaN power HEMT for reproducible Vth measurements

Subjects: Ohmic p-GaN transistors; threshold voltage shift; preconditioning protocol

  • Source: ISSN: 0038-1101 ; Solid-State Electronics ; https://hal.science/hal-04446838 ; Solid-State Electronics, 2024, 214, pp.108868. ⟨10.1016/j.sse.2024.108868⟩ ;

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