Item request has been placed! ×
Item request cannot be made. ×
loading  Processing Request

3D printing of bulk thermoelectric materials: laser powder bed fusion of N-type silicon germanium

Item request has been placed! ×
Item request cannot be made. ×
loading   Processing Request
  • معلومة اضافية
    • Contributors:
      Département des Technologies des Nouveaux Matériaux (Ex Département des Technologies des NanoMatériaux) (DTNM ); Laboratoire d'Innovation pour les Technologies des Energies Nouvelles et les nanomatériaux (LITEN); Institut National de L'Energie Solaire (INES); Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Université Savoie Mont Blanc (USMB Université de Savoie Université de Chambéry )-Centre National de la Recherche Scientifique (CNRS)-Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Université Savoie Mont Blanc (USMB Université de Savoie Université de Chambéry )-Centre National de la Recherche Scientifique (CNRS)-Direction de Recherche Technologique (CEA) (DRT (CEA)); Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Institut National de L'Energie Solaire (INES); Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Commissariat à l'énergie atomique et aux énergies alternatives (CEA)
    • بيانات النشر:
      HAL CCSD
      Elsevier
    • الموضوع:
      2023
    • Collection:
      Université Savoie Mont Blanc: HAL
    • نبذة مختصرة :
      International audience ; Among Additive Manufacturing (AM) methods, Laser Powder Bed Fusion (L-PBF), also called Selective Laser Melting (SLM), is prevalent to printing complex metal parts in small and medium series. Recent studies in L-PBF processing develops the manufacturing of new materials, including thermoelectric (TE) materials. This study presents manufacturing of an N type Si$_{80}$Ge$_{20}$ powder by L-PBF. Silicon germanium alloy is a TE material intended for high temperature applications. It is the first time that this semiconductor material is studied by AM technology. Dense samples of various shapes and sizes were produced, and a first process window was identified. Structural analyses have been performed, highlighting good densification. Unfortunately, mechanical cracking occurs in all samples. TE properties were investigated on as built samples, displaying low values (ZT = 0.11 at 600 °C), due to poor electrical conductivity. Overall, these results show that L-PBF of silicon germanium is possible, which could open up its scope of applications.
    • Relation:
      cea-04287122; https://cea.hal.science/cea-04287122; https://cea.hal.science/cea-04287122/document; https://cea.hal.science/cea-04287122/file/Manuscript%20final.pdf
    • الدخول الالكتروني :
      https://cea.hal.science/cea-04287122
      https://cea.hal.science/cea-04287122/document
      https://cea.hal.science/cea-04287122/file/Manuscript%20final.pdf
    • Rights:
      info:eu-repo/semantics/OpenAccess
    • الرقم المعرف:
      edsbas.50174E51